| PART |
Description |
Maker |
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| XC17S50APDG8C XC17S50ASO20C |
XC2S50 PROM C grade 559200 X 1 CONFIGURATION MEMORY, PDIP8
SERIAL PROM FOR 50000 SYSTEM GATE LOGIC 559200 X 1 CONFIGURATION MEMORY, PDSO20
|
Xilinx, Inc.
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| E28F004S5-85 E28F004S5-120 28F016S5 28F008S5 E28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
12V/5V Input Buck PWM Controller
Evaluation Kit/Evaluation System for the MAX5946A, MAX5946L
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 85 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 100 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 100 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 120 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| AM29LV160DB-90WCC AM29LV160DB-70WCC AM29LV160DT-70 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
29LV160BB 16MBIT FLASH 3V TSOP-48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PBGA48
IC SM FLASH 1MX16 120NS 3.3V 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| 24AA01T 24LC01T-I_STG 24AA01 24AA01-E_MSG 24AA01-E |
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible ...
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC01B features hardware write protect, Schmitt trigger inputs, 400
1K I2C Serial EEPROM
1K/2K I2CSerial EEPROMs in ISO Micromodules
|
MICROCHIP[Microchip Technology]
|
| SST25VF040-20-4C-S2AE SST25VF020-20-4C-SAE SST25VF |
4M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory
4M X 1 FLASH 2.7V PROM, DSO8
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| W39V080A W39V080AP W39V080AQ W39V080AT W39V080ATZ |
1M 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO40
1M 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO32
1M 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PQCC32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
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